3-61 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. http://www.intersil.com or 407-727-9207 | copyright ? intersil corporation 1999 hgtp15n40c1, 40e1, 50c1, 50e1, hgth20n40c1, 40e1, 50c1, 50e1 15a, 20a, 400v and 500v n-channel igbts features ? 15a and 20a, 400v and 500v ?v ce(on) 2.5v ?t fi 1 m s, 0.5 m s ? low on-state voltage ? fast switching speeds ? high input impedance ? no anti-parallel diode applications ? power supplies ? motor drives ? protection circuits description the hgth20n40c1, hgth20n40e1, hgth20N50C1, hgth20n50e1, hgtp15n40c1, hgtp15n40e1, hgtp15n50c1 and hgtp15n50e1 are n-channel enhancement-mode insulated gate bipolar transistors (igbts) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. these types can be operated directly from low-power integrated circuits. packaging availability part number package brand hgth20n40c1 to-218ac g20n40c1 hgth20n40e1 to-218ac g20n40e1 hgth20N50C1 to-218ac g20N50C1 hgth20n50e1 to-218ac g20n50e1 hgtp15n40c1 to-220ab g15n40c1 hgtp15n40e1 to-220ab g15n40e1 hgtp15n50c1 to-220ab g15n50c1 hgtp15n50e1 to-220ab g15n50e1 note: when ordering, use the entire part number. april 1995 packages hgth-types jedec to-218ac hgtp-types jedec to-220ab terminal diagram n-channel enhancement mode gate collector emitter collector (flange) collector (flange) gate collector emitter c e g absolute maximum ratings t c = +25 o c, unless otherwise speci?ed hgth20n40c1 hgth20n40e1 hgth20N50C1 hgth20n50e1 hgtp15n40c1 hgtp15n40e1 hgtp15n50c1 hgtp15n50e1 units collector-emitter voltage. . . . . . . . . . . . . . . . . . . . . . . . .v ces 400 500 400 500 v collector-gate voltage r ge = 1m w . . . . . . . . . . . . . . . . v cgr 400 500 400 500 v reverse collector-emitter voltage . . . . . . . . . . . . v ces (rev.) -5 -5 -5 -5 v gate-emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ge 20 20 20 20 v collector current continuous . . . . . . . . . . . . . . . . . . . . . . . i c 20 20 15 15 a collector current pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 35 35 35 35 a power dissipation at t c = +25 o c . . . . . . . . . . . . . . . . . . . p d 100 100 75 75 w power dissipation derating t c > +25 o c . . . . . . . . . . . . . . . . . 0.8 0.8 0.6 0.6 w/ o c operating and storage junction temperature range . . . t j , t stg -55 to +150 -55 to +150 -55 to +150 -55 to +150 o c file number 2174.3 www..net
3-62 speci?cations hgtp15n40c1, 40e1, 50c1, 50e1, hgth20n40c1, 40e1, 50c1, 50e1 electrical speci?cations t c = +25 o c, unless otherwise speci?ed parameters symbol test conditions limits units hgth20n40c1, e1, hgtp15n40c1, e1 hgth20N50C1, e1, hgtp15n50c1, e1 min max min max collector-emitter breakdown voltage bv ces i c = 1ma, v ge = 0 400 - 500 - v gate threshold voltage v ge(th) v ge = v ce , i c = 1ma 2.0 4.5 2.0 4.5 v zero-gate voltage collector current i ces v ce = 400v, t c = +25 o c - 250 - - m a v ce = 500v, t c = +25 o c ---250 m a v ce = 400v, t c = +125 o c - 1000 - - m a v ce = 500v, t c = +125 o c - - - 1000 m a gate-emitter leakage current i ges v ge = 20v, v ce = 0 - 100 - 100 na reverse collector-emitter leakage current i ce r ge = 0 w , v ec = 5v - -5 - -5 ma collector-emitter on voltage v ce(on) i c = 20a, v ge = 10v - 2.5 - 2.5 v i c = 35a, v ge = 20v - 3.2 - 3.2 v gate-emitter plateau voltage v gep i c = 10a, v ce = 10v - 6 (typ) - 6 (typ) v on-state gate charge q g(on) i c = 10a, v ce = 10v - 33 (typ) - 33 (typ) nc turn-on delay time t d(on)i i c = 20a, v ce(clp) = 300v, l = 25 m h, t j = +100 o c, v ge = 10v, r g = 25 w - 50 - 50 ns rise time t ri - 50 - 50 ns turn-off delay time t d(off)i - 400 - 400 ns fall time t fi 40e1, 50e1 680 (typ) 1000 680 (typ) 1000 ns 40c1, 50c1 400 500 400 500 ns turn-off energy loss per cycle (off switching dissipation = w off x frequency) w off i c = 10a, v ce(clp) = 300v, l = 25 m h, t j = +100 o c, v ge = 10v, r g = 25 w 40e1, 50e1 1810 (typ) m j 40c1, 50c1 1070 (typ) m j thermal resistance junction-to-case r q jc hgth, hgtm - 1.25 - 1.25 o c/w hgtp - 1.67 - 1.67 o c/w intersil corporation igbt product is covered by one or more of the following u.s. patents: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
3-63 hgtp15n40c1, 40e1, 50c1, 50e1, hgth20n40c1, 40e1, 50c1, 50e1 typical performance curves figure 1. max. switching current level. r g = 25 w , v ge = 0v are the min. allowable values figure 2. power dissipation vs temperature derating curve figure 3. typical normalized gate threshold volt- age vs junction temperature figure 4. typical transfer characteristics figure 5. typical saturation characteristics figure 6. typical collector-to-emitter on-voltage vs collector current 40 35 30 25 20 15 10 5 0 -75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175 i ce , collector current (a) t j , junction temperature ( o c) v ge = 10v, r gen = r gs = 50 w 100 80 60 40 20 0 +25 +50 +75 +100 +125 +150 rated power dissipation (%) t c , case temperature ( o c) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 0 +50 +100 +150 normalized gate threshold voltage t c , junction temperature ( o c) v ge = v ce , i c = 1ma 35 30 25 20 15 10 5 0 2.5 5.0 7.5 10.0 i ce , collector current (a) v ge , gate-to-emitter voltage (v) pulse test, v ce = 10v pulse duration = 80 m s duty cycle = 0.5% max. -40 o c +25 o c +125 o c 0 35 30 25 20 15 10 5 012345 i ce , collector current (a) v ce , collector-to-emitter voltage (v) v ge = 20v v ge = 10v v ge = 8v v ge = 7v v ge = 6v v ge = 5v v ge = 4v t c = +25 o c 0 35 30 25 20 15 10 5 01234 i ce , collector current (a) v ce(on) , collector-to-emitter voltage (v) pulse test, v ge = 10v pulse duration = 80 m s duty cycle = 0.5% max. +25 o c 0
3-64 hgtp15n40c1, 40e1, 50c1, 50e1, hgth20n40c1, 40e1, 50c1, 50e1 figure 7. capacitance vs collector-to-emitter voltage figure 8. typical v ce(on) vs temperature figure 9. typical turn-off delay time figure 10. typical inductive switching waveforms figure 11. typical fall time (i c = 10a) figure 12. typical fall time (i c = 20a) typical performance curves (continued) 2250 1800 1350 900 450 0 c, capacitance (pf) 01020304050 v ce , collector-to-emitter voltage (v) f = 1mhz ciss coss crss 2700 3.00 2.75 2.50 2.25 2.00 1.75 1.50 +25 +50 +75 +100 +125 +150 t j , junction temperature ( o c) v ce(on) , collector-emitter on voltage (v) i c = 10a, v ge = 15v i c = 10a, v ge = 10v i c = 20a, v ge = 15v i c = 20a, v ge = 10v 400 300 200 100 0 +25 +50 +75 +100 +125 +150 t j , junction temperature ( o c) t d(off)i , switching time (ns) i c = 20a, v ge = 10v, v cl = 300v l = 25 m h, r g = 25 w v ge v ce i c w off = i c * v ce dt 800 700 600 500 400 300 200 100 0 +25 +50 +75 +100 +125 +150 t j , junction temperature ( o c) t fi , switching time (ns) i c = 10a, v ge = 10v, v cl = 300v l = 25 m h, r g = 25 w 40c1/50c1 40e1/50e1 800 700 600 500 400 300 200 100 0 +25 +50 +75 +100 +125 +150 t j , junction temperature ( o c) t fi , switching time (ns) i c = 20a, v ge = 10v, v cl = 300v l = 25 m h, r g = 25 w 40c1/50c1 40e1/50e1
3-65 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?cation. intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/o r speci?cations at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of p atents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see web site http://www.intersil.com sales of?ce headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (407) 724-7000 fax: (407) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil (taiwan) ltd. taiwan limited 7f-6, no. 101 fu hsing north road taipei, taiwan republic of china tel: (886) 2 2716 9310 fax: (886) 2 2715 3029 hgtp15n40c1, 40e1, 50c1, 50e1, hgth20n40c1, 40e1, 50c1, 50e1 figure 13. typical clamped inductive turn-off switching loss/cycle figure 14. normalized switching waveforms at con- stant gate current. (refer to applica- tion notes an7254 and an7260 on the use of normalized switching waveforms) test circuit figure 15. inductive switching test circuit typical performance curves (continued) 1000 900 800 700 600 500 400 300 200 100 0 +25 +50 +75 +100 +125 +150 w off , turn-off energy loss ( m j) t j , junction temperature ( o c) 10a, 40c1/50c1 10a, 40e1/50e1 20a, 40c1/50c1 20a, 40e1/50e1 v ge = 10v, v ce(clp) = 300v l = 25 m h, r g = 25 w 500 375 250 125 0 v ce , collector-emitter voltage (v) v ge , gate-emitter voltage (v) 10 4 0 20 i g(ref) i g(act) 80 i g(ref) i g(act) time ( m s) gate- emitter voltage r l = 25 w i g(ref) = 0.76ma v ge = 10v collector-emitter voltage v cc = 0.25bv ces v cc = bv ces 8 6 2 bv ces note: for turn-off gate currents in excess of 3ma. v ce turn-off is not accurately represented by this normalization. 20v 0v r gen = 50 w 1/r g = 1/r gen + 1/r ge r ge = 50 w l = 25 m h v ce(clp) = r l = 4 w 300v v cc 80v
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